Page 1

QW-BSC05

REV:A

Comchip Technology CO., LTD.

CDBJSC8650-G

RoHS Device

Reverse Voltage: 650 V

Forward Current: 8 A

Dimensions in inches and (millimeter)

Parameter

Unit

Repetitive peak reverse voltage

DC blocking voltage

Typical continuous forward current

Non-repetitive peak forward surge current

Power dissipation

Typical thermal resistance

Operating junction temperature range

Symbol

650

80

102.4

45

1.465

-55 ~ +175

V

V

A

A

W

°C/W

°C

Storage temperature range

-55 ~ +175

°C

Value

650

T = 150°C

c

8

Repetitive peak forward surge current

40

A

Conditions

Tc = 25°C, tp = 10ms

Half sine wave, D = 0.3

Tc = 25°C, tp = 10ms

Half sine wave

= 25°C

= 110°C

Junction to case

Surge peak reverse voltage

650

V

TO-220-2

0.052(1.32)

0.048(1.23)

0.173(4.40)

0.181(4.60)

0.512(13.00)

0.551(14.00)

0.620(15.75)

0.600(15.25)

0.155(3.93)

0.138(3.50)

0.116(2.95)

0.104(2.65)

0.152(3.85)

0.148(3.75)

0.028(0.70)

0.019(0.49)

0.067(1.70)

0.035(0.88)

0.024(0.61)

0.203(5.15)

0.195(4.95)

0.045(1.14)

0.646(16.40)

Max.

0.311(7.90)

0.303(7.70)

0.409(10.40)

0.394(10.00)

0.260(6.60)

0.244(6.20)

0.107(2.72)

0.094(2.40)

Circuit diagram

K(1)

A(2)

K(3)

Features

- Rated to 650V at 8 Amps

- Short recovery time.

- High speed switching possible.

- Temperature independent switching behaviour.

- High temperature operation.

- High frequency operation.

- Positive

.

temperature coefficient on VF

Silicon Carbide Power Schottky Diode

Company reserves the right to improve product design , functions and reliability without notice.