1

Base

2

Emitter

Collector

3

Diagram:

Dimensions in inches and (millimeter)

3

1

2

0.118(3.00)

0.110(2.80)

0.055(1.40)

0.047(1.20)

0.079(2.00)

0.071(1.80)

0.041(1.05)

0.035(0.90)

0.020(0.50)

0.012(0.30)

0.006(0.15)

0.003(0.08)

0.100(2.55)

0.089(2.25)

0.004(0.10) max

0.012(0.30)

0.020(0.50)

RoHS Device

General Purpose Transistor

QW-BTR56

Page 1

REV A

:

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Emitter-Base voltage

Collector-Emitter voltage

Collector-Base voltage

Collector current

Symbol

Parameter

Value

Unit

V

V

V

5

25

40

1.5

A

300

mW

Collector power dissipation

°C/W

417

°C

Junction temperature

150

°C

Tstg

Storage temperature

-55~+150

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-Base breakdown voltage

0.1

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Collector cut-off current

Collector-Emitter saturation voltage

Transition frequency

C

25

40

5

0.1

0.5

V

V

V

µA

µA

V

Base-Emitter saturation voltage

1.2

V

Typ

DC current gain

350

200

40

100

Thermal resistance from

junction to ambient

1 : BASE

2 : EMITTER

3 : COLLECTOR

SOT-23

Emitter cut-off current

0.1

µA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-