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SPP80P06P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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SPP80P06P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc P-Channel MOSFET Transistor SPP80P06P，ISPP80P06P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA -60 V VGS(th) Gate Threshold Voltage VDS=VGS; ID= -5.5mA -2.1 -4.0 V RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -64A 0.023 Ω IGSS Gate-Source Leakage Current VGS= -20V; VDS= 0V -100 nA IDSS Drain-Source Leakage Current VDS= -60V; VGS= 0V -1 μ A VSD Diode forward voltage IF= -15A; VGS = 0V -1.35 V |
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