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IPU07N03LA Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPU07N03LA Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page ![]() IPU07N03LA Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1995 2653 pF Output capacitance C oss - 848 1128 Reverse transfer capacitance Crss - 124 186 Turn-on delay time t d(on) - 9 14 ns Rise time t r -18 28 Turn-off delay time t d(off) -28 43 Fall time t f -4 6 Gate Charge Characteristics 5) Gate to source charge Q gs -6 8 nC Gate charge at threshold Q g(th) - 3.2 4.2 Gate to drain charge Q gd - 4.6 6.9 Switching charge Q sw -7 11 Gate charge total Q g -16 22 Gate plateau voltage V plateau - 3.0 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V -14 19 nC Output charge Q oss V DD=15 V, V GS=0 V -18 24 Reverse Diode Diode continous forward current I S - - 30 A Diode pulse current I S,pulse - - 210 Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.88 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC 5) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=15 A, R G=2.7 Ω V DD=15 V, I D=15 A, V GS=0 to 5 V Rev. 1.1 page 3 2003-02-06 |
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