650

V

1200

mΩ

4

A

General Description

Features

New technology for high voltage device

Low on-resistance and low conduction losses

Small package

Ultra Low Gate Charge cause lower driving requirements

100% Avalanche Tested

ROHS compliant

Application

Power factor correction

PFC

Switched mode power supplies(SMPS)

Uninterruptible Power Supply

UPS

Package Marking And Ordering Information

Device

Device Package

Marking

RM4N650T2

TO-220

4N650

RM4N650HD

TO-263

4N650

RM4N650TI

Table 1.

)

Parameter

Symbol

RM4N650T2

RM4N650HD

RM4N650TI

Unit

Drain-Source Voltage (

650

V

Gate-Source Voltage (

30

V

Continuous Drain Current

at Tc=25°C

4

4*

A

Continuous Drain Current

at Tc=100°C

2.5

2.5

A

Pulsed drain current

(Note 1)

12

12

A

Maximum Power Dissipation(Tc=25

)

Derate above 25

°C

46

0.37

28.5

0.23

W

W/

°C

Single pulse avalanche energy

(Note2)

130

mJ

Avalanche current

(Note 1)

2

A

Repetitive Avalanche energy

(Note 1)

0.2

mJ

Schematic diagram

TO-263

TO-220

TO-220F

TO-220F

4N650

RM4N650HD

RM4N650T2

RM4N650TI

The

gate charge. This super junction MOSFET fits the industry’s

AC-DC

SMPS

requirements

for

PFC,

AC/DC

power

conversion, and industrial power applications.

2017-05

REV:A15