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RM30N100LD Datasheet(PDF) 1 Page - Rectron Semiconductor |
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RM30N100LD Datasheet(HTML) 1 Page - Rectron Semiconductor |
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1 / 7 page  N-Channel Enhancement Mode Power MOSFET Description The RM30N100LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON) < 31mΩ @ VGS=10V (Typ:27mΩ) Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 30N100 RM30N100LD TO-252-2L - -- Absolute Maximum Ratings (TC=25 unless otherwise noted) Symbol Parameter Limit Unit VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A ID (100 ) Drain Current-Continuous(TC=100 )21 A IDM Pulsed Drain Current 70 A PD Maximum Power Dissipation 85 W Derating factor 0.57 W/ EAS Single pulse avalanche energy (Note 5) 256 mJ TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 RM30N100LD 2016-10 REV:O15 G S D |
Similar Part No. - RM30N100LD |
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Similar Description - RM30N100LD |
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