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RM35N30DF Datasheet(PDF) 1 Page - Rectron Semiconductor

Part # RM35N30DF
Description  N-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
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Manufacturer  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

RM35N30DF Datasheet(HTML) 1 Page - Rectron Semiconductor

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N-Channel Enhancement Mode Power MOSFET
Description
The RM35N30DF uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =35A
RDS(ON) < 7.0m
@ VGS=10V
RDS(ON) < 12m
@ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Secondary side synchronous rectifier
High side switch in POL DC/DC converter
100% UIS TESTED!
Schematic diagram
Marking and pin assignment
DFN 5x6 EP top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
-
-
-
Absolute Maximum Ratings (TC=25
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
35
A
Pulsed Drain Current
IDM
120
A
Maximum Power Dissipation
PD
40
W
Derating factor
0.32
W/
Single pulse avalanche energy
(Note 5)
EAS
150
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
DFN 5x6 EP
RM35N30DF
35N30
RM35N30DF
2017-01
REV:O15


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