K4M51163LE datasheet(5/12 Pages) SAMSUNG

5 / 12 page

K4M51163LE - Y(P)C/L/F

February 2004

Mobile-SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 70

°C)

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Internal TCSR can be supported(In commercial Temp : Max 40

°C/Max 70°C).

4. K4M51163LE-Y(P)C**

5. K4M51163LE-Y(P)L**

6. K4M51163LE-Y(P)F**

7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

-80

-1H

-1L

Operating Current

(One Bank Active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

150

145

130

Precharge Standby Current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

1.5

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

1.5

Precharge Standby Current

in non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Active Standby Current

in power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

Operating Current

(Burst Mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

230

210

190

Refresh Current

ICC5

tRC

≥ tRC(min)

350

320

280

Self Refresh Current

ICC6

CKE

≤ 0.2V

-C

1800

-L

1300

-F

Internal TCSR

Max 40

Max 70

°C

Full Array

850

1300

1/2 of Full Array

600

900

1/4 of Full Array

500

700

K4M51163LE Datasheet(PDF) 5 Page - Samsung semiconductor

K4M51163LE Datasheet(HTML) 5 Page - Samsung semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL