2011. 6. 21

2/7

KF4N65P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

650

-

-

V

Breakdown Voltage Temperature Coefficient

-

0.65

-

V/

℃

Drain Cut-off Current

-

-

10

μA

Gate Threshold Voltage

2.5

-

4.5

V

Gate Leakage Current

-

-

±100

nA

Drain-Source ON Resistance

-

2.1

2.5

Ω

Dynamic

Total Gate Charge

(Note4,5)

-

12

-

nC

Gate-Source Charge

-

2.5

-

Gate-Drain Charge

-

5.0

-

Turn-on Delay time

(Note4,5)

-

20

-

ns

Turn-on Rise time

-

15

-

Turn-off Delay time

-

45

-

Turn-off Fall time

-

15

-

Input Capacitance

-

510

-

pF

Output Capacitance

-

60

-

Reverse Transfer Capacitance

-

6.5

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

3.6

A

Pulsed Source Current

-

-

14.4

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

dIs/dt=100A/

μs

-

350

-

ns

Reverse Recovery Charge

-

2.1

-

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width

≤ 300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

2

PRODUCT NAME

LOT NO

1

713

2

KF4N65

F

1

701

2

KF4N65

P

1

Marking