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LE-A-Q7WP Datasheet(PDF) 4 Page - OSRAM GmbH |
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LE-A-Q7WP Datasheet(HTML) 4 Page - OSRAM GmbH |
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4 / 21 page ![]() 2014-02-04 4 Version 1.1 LE A Q7WP Characteristics (TS = 25 °C; IF = 1400 mA; per Chip) Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength at peak emission Wellenlänge d. emittierten Lichtes (typ.) λpeak 624 nm Dominant Wavelength 2)page 20 Dominantwellenlänge 2) Seite 20 (min.) (typ.) (max.) λdom λdom λdom 612 617 624 nm nm nm Spectral bandwidth at 50% Irel max Spektrale Bandbreite b. 50% Irel max (typ.) Δλ 18 nm Viewing angle at 50 % IV Abstrahlwinkel bei 50 % IV (typ.) 2ϕ 120 ° Forward voltage 3) page 20 Durchlassspannung 3)Seite 20 (per Chip) (min.) (typ.) (max.) VF VF VF 2.00 2.30 2.90 V V V Reverse current Sperrstrom IR not designed for reverse operation Partial Flux acc. CIE 127:2007 Partieller Fluss (ΦV 120° = x * ΦV 180°) (typ.) ΦE/V, 120° 0.82 Radiating surface Abstrahlende Fläche (typ.) Acolor 1.5 x 2.6 mm² Real thermal resistance junction / solder point Realer Wärmewiderstand Sperrschicht / Lötpad (typ.) (max.) Rth JS real Rth JS real 1.6 1.9 K/W K/W "Electrical" thermal resistance junction / solder point "Elektrischer" Wärmewiderstand Sperrschicht / Lötpad (with efficiency ηe = 19 %) (typ.) (max.) Rth JS el Rth JS el 1.3 1.5 K/W K/W |
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