IXFN39N90 datasheet(1/4 Pages) IXYS

Part #	IXFN39N90

Description	HiPerFET Power MOSFETs Single MOSFET Die

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

Logo

1 / 4 page

Features

• Internationalstandardpackages

• miniBLOC, withAluminiumnitride

isolation

• Low R

DS (on) HDMOS

TM process

• Ruggedpolysilicongatecellstructure

• UnclampedInductiveSwitching(UIS)

rated

• Lowpackageinductance

• FastintrinsicRectifier

Applications

• DC-DC converters

• Batterychargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperatureandlightingcontrols

Advantages

• Easy to mount

• Space savings

• High power density

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 3 mA

900

V

BV

DSS

Temperature dependence

3.68

V/K

V

GH(th)

V

DS = VGS, ID = 8 mA

2.5

5.0

V

GH(th)

Temperature dependence

-0.009

V/K

I

GSS

V

GS = ±20 VDC, VDS = 0

±200 nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C

100

µA

V

GS

= 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5

I

D25

0.22

Ω

Pulse test, t

≤ 300 µs,

duty cycle d

≤ 2 %

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

900

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

900

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C= 25°C39

A

I

DM

T

C= 25°C, pulse width limited by TJM

154

A

I

AR

T

C= 25°C39

A

E

AR

T

C= 25°C64

mJ

E

AS

T

C= 25°C4

J

dv/dt

I

S ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

700

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

30

g

HiPerFETTM

Power MOSFETs

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t

rr

98628B (9/01)

D

S

G

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

V

DSS

=

900 V

I

D25

=

39 A

R

DS(on)

=

0.22

Ω

t

rr ≤

≤≤≤≤ 250 ns

IXFN 39N90

Similar Part No. - IXFN39N90

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXFN39N90	214Kb / 5P	Power MOSFET
IXYS Corporation	IXFN39N90	214Kb / 5P	Power MOSFET

More results

Similar Description - IXFN39N90

Manufacturer	Part #	Datasheet	Description
IXYS Corporation	IXFN340N06	100Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN280N07	102Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN34N100	101Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN75N50	126Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN60N60	71Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN130N30	162Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFL44N60	532Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN48N55	77Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN80N48	137Kb / 2P	HiPerFET Power MOSFETs Single Die MOSFET
	IXFN80N50	577Kb / 4P	HiPerFET Power MOSFETs Single Die MOSFET

More results

IXFN39N90 Datasheet(PDF) 1 Page - IXYS Corporation

IXFN39N90 Datasheet(HTML) 1 Page - IXYS Corporation

Similar Part No. - IXFN39N90

Similar Description - IXFN39N90

Html Pages

1 2 3 4

Datasheet Download

Link URL