IRGS4620DPbF datasheet(2/17 Pages) INFINEON

2 / 17 page

IRGB/IB/P/SP4620D/EPbF

2015-11-23

Absolute Maximum Ratings

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

600

IC @ TC = 25°C

Continuous Collector Current

IC @ TC = 100°C

Continuous Collector Current

ICM

Pulse Collector Current, VGE = 15V 

ILM

Clamped Inductive Load Current, VGE = 20V 

IF @ TC = 25°C

Diode Continuous Forward Current

IF @ TC = 100°C

Diode Continuous Forward Current

VGE

Continuous Gate-to-Emitter Voltage

±20

PD @ TC = 25°C

Maximum Power Dissipation

140

PD @ TC = 100°C

Maximum Power Dissipation

Operating Junction and

-40 to +175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 sec. (1.6mm from case)

300

Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)

10 lbf·in (1.1 N·m)

IFM

Diode Maximum Forward Current 

Transient Gate to Emitter Voltage

±30

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

Thermal Resistance Junction-to-Case (D2Pak, TO-220)

–––

1.07

°C/W

RθCS

Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D2Pak,

TO-220 Full-Pak )

–––

0.50

–––

RθJA

Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak) 

–––

Thermal Resistance Junction-to-Case (D2Pak, TO-220)

–––

3.66

Thermal Resistance Junction-to-Case (TO-247)

–––

1.12

Thermal Resistance Junction-to-Case (TO-247)

–––

3.71

Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)

–––

Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)

–––

RθJC (IGBT) Thermal Resistance Junction-to-Case (TO-220 Full-Pak)

–––

3.75

RθJC (Diode) Thermal Resistance Junction-to-Case (TO-220 Full-Pak)

–––

6.22

Thermal Resistance Case-to-Sink (TO-247)

–––

0.24

–––

Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220 Full-Pak)

–––

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, IC = 100µA 

ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage

—

0.40

—

V/°C VGE = 0V, IC = 1mA (25°C-175°C)

VCE(on)

Collector-to-Emitter Saturation Voltage

—

1.55

1.85

IC = 12A, VGE = 15V, TJ = 25°C

—

1.90

—

IC = 12A, VGE = 15V, TJ = 150°C

VGE(th)

Gate Threshold Voltage

4.0

—

6.5

VCE = VGE, IC = 350µA

ΔVGE(th)/ΔTJ

Threshold Voltage Temp. Coefficient

—

-18

—

mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)

gfe

Forward Transconductance

—

7.7

—

VCE = 50V, IC = 12A, PW = 80µs

ICES

Collector-to-Emitter Leakage Current

—

2.0

—

µA

VGE = 0V, VCE = 600V

—

475

—

VGE = 0V, VCE = 600V, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

VFM

Diode Forward Voltage Drop

—

2.1

3.1

IF = 12A

—

1.6

—

IF = 12A, TJ = 175°C

—

1.97

—

IC = 12A, VGE = 15V, TJ = 175°C

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