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ISL6257 Datasheet(PDF) 21 Page - Renesas Technology Corp

Part # ISL6257
Description  Highly Integrated Narrow VDC Battery Charger for Notebook Computers
PDF  22 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

ISL6257 Datasheet(HTML) 21 Page - Renesas Technology Corp

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ISL6257
FN9288 Rev 2.00
Page 21 of 22
Jan 17, 2007
Component Placement
The power MOSFET should be close to the IC so that the gate
drive signal, the LGATE, UGATE, PHASE, and BOOT, traces
can be short.
Place the components in such a way that the area under the IC
has less noise traces with high dV/dt and di/dt, such as gate
signals and phase node signals.
Signal Ground and Power Ground Connection
At minimum, a reasonably large area of copper, which will
shield other noise couplings through the IC, should be used as
signal ground beneath the IC. The best tie-point between the
signal ground and the power ground is at the negative side of
the output capacitor on each side, where there is little noise; a
noisy trace beneath the IC is not recommended.
GND and VDD Pin
At least one high quality ceramic decoupling cap should be
used to cross these two pins. The decoupling cap can be put
close to the IC.
LGATE Pin
This is the gate drive signal for the bottom MOSFET of the
buck converter. The signal going through this trace has both
high dV/dt and high di/dt, and the peak charging and
discharging current is very high. These two traces should be
short, wide, and away from other traces. There should be no
other traces in parallel with these traces on any layer.
PGND Pin
PGND pin should be laid out to the negative side of the
relevant output cap with separate traces.The negative side of
the output capacitor must be close to the source node of the
bottom MOSFET. This trace is the return path of LGATE.
PHASE Pin
This trace should be short, and positioned away from other
weak signal traces. This node has a very high dV/dt with a
voltage swing from the input voltage to ground. No trace
should be in parallel with it. This trace is also the return path for
UGATE. Connect this pin to the high-side MOSFET source.
UGATE Pin
This pin has a square shape waveform with high dV/dt. It
provides the gate drive current to charge and discharge the top
MOSFET with high di/dt. This trace should be wide, short, and
away from other traces similar to the LGATE.
BOOT Pin
This pin’s di/dt is as high as the UGATE; therefore, this trace
should be as short as possible.
CSIP, CSIN Pins
The input current sense resistor connects to the CSIP and
CSIN pins through a low pass filter. The traces should be away
and guarded/shielded from the high dV/dt and di/dt nodes like
Phase, Boot.
CSOP, CSON Pins
The charging current sense resistor connects to the CSOP and
the CSON pins through a low pass filter. The traces should be
away and guarded/shielded from the high dV/dt and di/dt
nodes like PHASE, BOOT. In general, the current sense
resistor should be close to the IC.
EN Pin
This pin stays high at enable mode and low at idle mode and is
relatively robust. Enable signals should refer to the signal
ground.
DCIN Pin
This pin connects to AC adapter output voltage, and should be
less noise sensitive.
Copper Size for the Phase Node
The capacitance of PHASE should be kept very low to
minimize ringing. It would be best to limit the size of the
PHASE node copper in strict accordance with the current and
thermal management of the application.
Identify the Power and Signal Ground
The input and output capacitors of the converters, the source
terminal of the bottom switching MOSFET PGND should
connect to the power ground. The other components should
connect to signal ground. Signal and power ground are tied
together at one point.
Clamping Capacitor for Switching MOSFET
It is recommended that ceramic caps be used closely
connected to the drain of the high-side MOSFET, and the
source of the low-side MOSFET. This capacitor reduces the
noise and the power loss of the MOSFET.



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