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VSC7940 Datasheet(PDF) 3 Page - Vitesse Semiconductor Corporation |
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VSC7940 Datasheet(HTML) 3 Page - Vitesse Semiconductor Corporation |
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3 / 16 page ![]() VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7940 SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control G52357-0, Rev 3.2 Page 3 05/11/01 © VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012 Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com Internet: www.vitesse.com NOTES: (1) Both IBIAS and IMOD will turn off if any of the current set pins are grounded. (2) Assumes laser diode to monitor diode transfer func- tion does not change with temperature. Table 3: PECL and TTL/CMOS Input /Output Specifications Absolute Maximum Ratings(1) Power Supply Voltage (VCC)............................................................................................................. -0.5V to +7V Current into BIAS.....................................................................................................................-20mA to +150mA Current into OUT+, OUT- ...............................................................................................................................TBD Current into MD ............................................................................................................................. -5mA to +5mA Current into FAIL ......................................................................................................................... -10mA to 30mA Voltage at DATA+, DATA-, CLK+, CLK-, ENABLE, LATCH......................................... -0.5V to (VCC + 0.5V) Voltage at APCFILT, MODSET, BIASMAX, APCSET, MD, FAIL ............................................. -0.5V to +3.0V Voltage at OUT+, OUT- ..................................................................................................... -0.5V to (VCC + 1.5V) Voltage at BIAS .................................................................................................................. -0.5V to (VCC + 0.5V) Continuous Power Dissipation (TA = +85°C, TQFP derate 20.8mW/°C above +85°C) .........................1350mW Operating Junction Temperature Range ...................................................................................... -55°C to +150°C Storage Temperature Range ........................................................................................................ -65°C to +165°C NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus- ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may affect device reliability. Recommended Operating Conditions Positive Voltage Rail (VCC).............................................................................................................................. +5V Negative Voltage Rail (GND) ............................................................................................................................ 0V Ambient Temperature Range (TA).................................................................................................. -40°C to +85°C Modulation Current Stability -480 -50 480 ppm/ °C IMOD=60mA 250 IMOD=5mA ABIAS BIASMON to IBIAS Gain 37 IBIAS/IBIASMON AMOD MODMON to IMON Gain 29 IMOD/IMODMON Symbol Parameter Min Typ Max Units Conditions VID Differential Input Voltage 100 1600 mVp-p (DATA+)-(DATA-) VICM Common-Mode Input Voltage VCC - 1.49 VCC - 1.32 VCC - VID/4 V PECL-compatible IIN Clock and Data Input Current -1 10 mA VIH TTL Input High Voltage (ENABLE, LATCH) 2.0 V VIL TTL Input Low Voltage (ENABLE, LATCH) 0.8 V TTL Output High Voltage (FAIL)2.4 VCC - 0.3 VCC V Sourcing 50µA TTL Output Low Voltage (FAIL) 0.1 0.44 V Sinking 100µA Symbol Parameter Min Typ Max Units Conditions |
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