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ISL6567 Datasheet(PDF) 21 Page - Renesas Technology Corp |
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ISL6567 Datasheet(HTML) 21 Page - Renesas Technology Corp |
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21 / 26 page ![]() ISL6567 FN9243 Rev 4.00 Page 21 of 26 August 9, 2011 LAYOUT CONSIDERATIONS MOSFETs switch very fast and efficiently. The speed with which the current transitions from one device to another causes voltage spikes across the interconnecting impedances and parasitic circuit elements. These voltage spikes can degrade efficiency, radiate noise into the circuit and lead to device overvoltage stress. Careful component layout and printed circuit design minimizes the voltage spikes in the converter. Consider, as an example, the turnoff transition of the upper PWM MOSFET. Prior to turnoff, the upper MOSFET was carrying channel current. During the turnoff, current stops flowing in the upper MOSFET and is picked up by the lower MOSFET. Any inductance in the switched current path generates a large voltage spike during the switching interval. Careful component selection, tight layout of the critical components, and short, wide circuit traces minimize the magnitude of voltage spikes. There are two sets of critical components in a DC/DC converter using a ISL6567 controller. The power components are the most critical because they switch large amounts of energy. Next are small signal components that connect to sensitive nodes or supply critical bypassing current and signal coupling. Although the ISL6567 allows for external adjustment of the channel-to-channel current balancing (via the RISEN resistors), it is desirable to have a symmetrical layout, preferably with the controller equidistantly located from the two power trains it controls. Equally important are the gate drive lines (UGATE, LGATE, PHASE): since they drive the power train MOSFETs using short, high current pulses, it is important to size them accordingly and reduce their overall impedance. Equidistant placement of the controller to the two power trains also helps keeping these traces equally long (equal impedances, resulting in similar driving of both sets of MOSFETs). VIA CONNECTION TO GROUND PLANE ISLAND ON POWER PLANE LAYER ISLAND ON CIRCUIT PLANE LAYER KEY LOCATE CLOSE TO IC FIGURE 26. PRINTED CIRCUIT BOARD POWER PLANES AND ISLANDS LOCATE NEAR LOAD (MINIMIZE CONNECTION PATH) ISL6567 +12VIN Q1 Q2 Q3 Q4 COMP FB GND VCC BOOT1 BOOT2 UGATE1 UGATE2 REFTRK LGATE1 LGATE2 LIN LOUT1 (CHFIN1) CBIN1 (CHFIN2) CBIN2 CBOOT1 CBOOT2 LOUT2 (CHFOUT) CBOUT RPG R2 R1 C1 C2 (CF1) PHASE1 PHASE2 VOUT PGND PVCC (CF2) +5VIN MON EN RFS PGOOD REN R2 HEAVY TRACE ON CIRCUIT PLANE LAYER LOCATE NEAR SWITCHING TRANSISTORS (MINIMIZE CONNECTION PATH) (MINIMIZE CONNECTION PATH) RISEN1 ISEN1 RISEN2 ISEN2 RGND VSEN VDIFF CSS SS FS RS RP |
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