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EM8900 Datasheet(PDF) 11 Page - EM Microelectronic - MARIN SA |
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EM8900 Datasheet(HTML) 11 Page - EM Microelectronic - MARIN SA |
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11 / 14 page ![]() DATASHEET Ɩ EM8900 Copyright 2017, EM Microelectronic-Marin SA 8900-DS, Version 4.1, 30-Mar-17 11 www.emmicroelectronic.com 420005-A01, 3.0 6.3.4. TEG SELECTION EXAMPLE 1 This example assumes an industrial application operated with a TEG element attached to a hot water pipe on the hot side and connected to a cooling element of 10 [K/W] in ambient air on the cold side. The electronic system requires an average power of 1 mW and must operate fully autonomously. The maximum output voltage is 4.2V. We arrive at the following selection of parameter values: 1. The best transformer turn ratio in this power range is 1:20 2. The ideal TEG thermal resistivity is 10 [K/W] 3. According to theTable 8, CFB is 18 pF (VOUT = 4.2V ; Turn ratio = 1:20) 4. According to the Figure 5-13, the ideal TEG electrical resistivity is about 4 Ω at 1 mW. The following TEG by Marlow offers characteristics close these values: Part number: NL1023T-01AC Thermal resistivity: 11.30 [K/W] Electrical resistivity: 3.50 [ Ω] Seebeck coefficient: 27 [mV/K] 6.3.5. TEG SELECTION EXAMPLE 2 This application example assumes a wearable device in contact with the skin on the hot side and TEG with a cooling element of 100 [K/W] in ambient air. The electronic system requires an average power of 20 μW and operates fully autonomously. The maximum output voltage is 2.0V. 1. The best turn ratio for the transformer in this power range is 1:100 2. The ideal TEG thermal resistivity is 100 [K/W] 3. According to the Table 8, no CFB is required (secondary side of transformer is directly connected to FB) 4. According to the Figure 5-7, the ideal TEG electrical resistivity is about 2 Ω at 20μW. The following TEG by Marlow offers characteristics close to these values when 2 elements are electrically connected in series and thermally connected in parallel: Part number: 1x NL1010T-01AC 2x NL1010T-01AC Thermal resistivity: 191.40 [K/W] 95.7 [K/W] Electrical resistivity: 0.64 [ Ω] 1.28 [ Ω] Seebeck coefficient: 2.665 [mV/K] 5.33 [mV/K] 6.4. CAPACITOR SELECTION 6.4.1. INPUT CAPACITOR CHRV The capacitor CHRV acts as a charge bank and reduces the input voltage ripple and therefore ohmic loss in the TEG. The size of that capacitor depends on the current amplitude in the primary side of the transformer, the input voltage average and the internal resistivity of the TEG (RTEG). Higher is the current; higher must be CHRV for a given VTEG and RTEG. We advise selecting CHRV as follows: Input power range Recommended CHRV value Up to 100 μW 47 μF 100 μW to 1 mW 100 μF Above 1 mW 470 μF Table 7 CHRV Capacitor Selection |
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