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FDC6331L Datasheet(PDF) 2 Page - ON Semiconductor

Part # FDC6331L
Description  Integrated Load Switch
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDC6331L Datasheet(HTML) 2 Page - ON Semiconductor

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Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVIN
Vin Breakdown Voltage
VON/OFF = 0 V, ID = –250 A8
V
ILoad
Zero Gate Voltage Drain Current
VIN = 6.4 V,
VON/OFF = 0 V
–1
A
IFL
Leakage Current, Forward
VON/OFF = 0 V, VIN = 8 V
–100
nA
IRL
Leakage Current, Reverse
VON/OFF = 0 V, VIN = –8 V
100
nA
On Characteristics
(Note 2)
VON/OFF (th)
Gate Threshold Voltage
VIN = VON/OFF, ID = –250 A
0.4
0.9
1.5
V
RDS(on)
Static Drain–Source
On–Resistance (Q2)
VGS = –4.5 V,
ID = –2.8A
VGS = –2.5 V,
ID = –2.5 A
VGS = –1.8 V,
ID = –2.0 A
34
45
64
55
70
100
m
RDS(on)
Static Drain–Source
On–Resistance (Q1)
VGS = 4.5 V,
ID = 0.4A
VGS = 2.7 V,
ID = 0.2 A
3.1
3.8
4
5
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.6
A
VSD
Drain–Source Diode Forward
Voltage
VON/OFF = 0 V, IS = –0.6 A (Note 2)
–1.2
V
Notes:
1. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R JC is guar anteed by design while R JA is determined by the user’s board design.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDC6331L Load Switch Application Circuit
Q2
Q1
R1
IN
OUT
ON/OFF
LOAD
C1
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.



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