RS1MDF datasheet(2/5 Pages) DIODES

2 / 5 page

RS1MDF

Document number: DS38340 Rev. 2 - 2

2 of 5

www.diodes.com

June 2016

RS1MDF

Notes:

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage (Note 5)

VRRM

VRWM

1,000

RMS Reverse Voltage

VR(RMS)

700

Average Rectified Output Current

@ TA = +100°C

1.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Terminal (Note 7)

RθJT

°C/W

Typical Thermal Resistance, Junction to Air (Note 7)

RθJA

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

5. Short duration pulse test used to minimize self-heating effect.

6. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.1" x 0.15" copper pads.

7. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pads.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 5)

V(BR)R

1,000

—

IR = 10µA

Forward Voltage Drop

—

0.95

0.83

1.3

—

IF = 1A, TJ = +25°C

IF = 1A, TJ = +125°C

Leakage Current (Note 5)

—

0.2

—

µA

VR = 1,000V, TJ = +25°C

VR = 1,000V, TJ = +125°C

Reverse Recovery Time

trr

—

140

500

IF = 0.5A, IR = 1.0A, Irr = 0.25A

Total Capacitance

—

VR = 4.0VDC, f = 1MHz

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