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FT29F040B-120EE Datasheet(PDF) 1 Page - Force Technologies Ltd |
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FT29F040B-120EE Datasheet(HTML) 1 Page - Force Technologies Ltd |
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1 / 36 page ![]() FT29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10% for read and write operations — Minimi ses system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm FT29F040 device ■ High performance — Access times as fast as 55 ns ■ Low power consumption — 20 mA typical active read current — 30 mA typical program/erase current — 1 µA typical standby current (standard access time to active mode) ■ Flexible sector architecture — 8 uniform sectors of 64 Kbytes each — Any combination of sectors can be erased — Supports full chip erase — Sector protection: A hardware method of locking sectors to prevent any program or erase operations within that sector ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies bytes at specified addresses ■ Minimum 1,000,000 program/erase cycles per sector guaranteed ■ 20-year data retention at 125°C — Reliable operation for the life of the system ■ Package options — 32-pin PLCC, TSOP, or PDIP ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply Flash standard — Superior inadvertent write protection ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation Rev 2 Page 1 of 36 |
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