K6R1016C1C-C/C-L, K6R1016C1C-I/C-P

CMOS SRAM

Revision 4.0

- 9 -

September 2001

°C)

* The above parameters are also guaranteed at industrial temperature range.

Data Retention Characteristic is for L-ver only.

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Unit

CS

2.0

-

5.5

V

Data Retention Current

-

-

0.4

mA

-

-

0.3

Data Retention Set-Up Time

See Data Retention

Wave form(below)

0

-

-

ns

Recovery Time

5

-

-

ms

DATA RETENTION WAVE FORM

CS controlled

4.5V

CS

GND

Data Retention Mode

CS