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MMRF1007HSR5 Datasheet(PDF) 7 Page - NXP Semiconductors

Part # MMRF1007HSR5
Description  RF Power Field Effect Transistors
PDF  17 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF1007HSR5 Datasheet(HTML) 7 Page - NXP Semiconductors

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MMRF1007HR5 MMRF1007HSR5
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
23
1
0
100
17
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Power Gain and Drain Efficiency
versus Output Power
D
16
1000
10000
25_C
TC =--30_C
85_C
20
18
Gps
19
20
21
10
10
VDD =50 Vdc
IDQ = 150 mA
f = 1030 MHz
Pulse Width = 128 sec
Duty Cycle = 10%
22
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 11. MTTF versus Junction Temperature --
128 sec, 10% Duty Cycle
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 1000 W Peak, Pulse Width = 128 sec,
Duty Cycle = 10%, and D = 56%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110
130
150
170
190
210
230
105
108
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 12. MTTF versus Junction Temperature --
Mode--S
This above graph displays calculated MTTF in hours when the device
is operated at VDD =50 Vdc,Pout = 1000 W Peak, Mode--S Pulse Train,
Pulse Width = 32 sec, Duty Cycle = 6.4%, and D = 59%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110
130
150
170
190
210
230
105
108



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