MMRF1304LR5 datasheet(3/12 Pages) NXP

Part #	MMRF1304LR5

Description	RF Power LDMOS Transistor

PDF	12 Pages

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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MMRF1304LR5

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ =10 mA, Pout = 25 W Peak (5 W Avg.), f = 512 MHz,

Pulse, 100 sec Pulse Width, 20% Duty Cycle

Power Gain

Gps

24.5

25.9

27.5

Drain Efficiency

D

70.0

74.0

—

Input Return Loss

IRL

—

--16

--10

Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 150 mA

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test Voltage, VDD

Result

512

Pulse

(100 sec, 20% Duty Cycle)

>65:1

at all Phase Angles

0.14 Peak

(3 dB Overdrive)

No Device

Degradation

0.14

(3 dB Overdrive)

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