MMRF1308HSR5 datasheet(2/13 Pages) NXP

2 / 13 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF1308HR5 MMRF1308HSR5

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (1)

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID = 100 mA)

V(BR)DSS

133

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS =0 Vdc)

IDSS

—

Adc

On Characteristics

Gate Threshold Voltage (1)

(VDS =10 Vdc, ID = 960 Adc)

VGS(th)

1.7

2.2

2.7

Vdc

Gate Quiescent Voltage

(VDD =50 Vdc, ID = 100 mAdc, Measured in Functional Test)

VGS(Q)

2.0

2.5

3.0

Vdc

Drain--Source On--Voltage (1)

(VGS =10 Vdc, ID =2 Adc)

VDS(on)

—

0.26

—

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.60

—

Output Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

129

—

Input Capacitance

(VDS =50 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

342

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 600 W Peak (120 W Avg.), f = 230 MHz,

100

sec Pulse Width, 20% Duty Cycle

Power Gain

Gps

23.5

25.0

26.5

Drain Efficiency

D

73.5

74.6

—

Input Return Loss

IRL

—

--18

--12

1. Each side of device measured separately.

MMRF1308HSR5 Datasheet(PDF) 2 Page - NXP Semiconductors

MMRF1308HSR5 Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL