| Electronic Components Datasheet Search |
|
ASIPT3642 Datasheet(PDF) 1 Page - Advanced Semiconductor |
|
|
|||||||||||||||||||||||||||||
ASIPT3642 Datasheet(HTML) 1 Page - Advanced Semiconductor |
|
|
1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 40 V BVCEX IC = 200 mA VBE = -1.5 V 65 V BVCBO IC = 500 µA 65 V ICEO VCE = 30 V 250 µµµµA IEBO VEB = 4.0 V 250 µµµµA hFE VCE = 5.0 V IC = 1.0 A 5.0 --- Cob VCB = 30 V f = 1.0 MHz 20 pF ft VCE = 28 V IC = 150 mA f = 100 MHz 400 MHz Pout GP ηηηη C VCE = 28 V f = 175 MHz 13.5 5.8 70 W dB % NPN SILICON RF POWER TRANSISTOR PT3642 DESCRIPTION: The ASI PT3642 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400MHz. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS IC 3.0 A VCE 40 V PDISS 23 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθ JC 7.6 °C/W PACKAGE STYLE TO- 60 1 = EMITTER 2 = BASE 3 = COLLECTOR CASE = EMITTER |
Similar Part No. - ASIPT3642 |
|
Similar Description - ASIPT3642 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |