SSM3J01T datasheet(2/5 Pages) TOSHIBA

2 / 5 page

SSM3J01T

2002-01-16

Electrical Characteristics (Ta

==== 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0

±1

Drain-Source breakdown voltage

V (BR) DSS

ID = -1 mA, VGS = 0

-30

Drain Cut-off current

IDSS

VDS = -30 V, VGS = 0

-1

Gate threshold voltage

Vth

VDS = -3 V, ID = -0.1 mA

-0.6

-1.1

Forward transfer admittance

|Yfs|

VDS = -3 V, ID = -0.85 A

(Note3)

1.2

2.3

Drain-Source ON resistance

RDS (ON)

ID = -0.85 A, VGS = -4 V

(Note3)

0.3

0.4

Drain-Source ON resistance

RDS (ON)

ID = -0.85 A, VGS = -2.5 V (Note3)

0.4

0.6

Input capacitance

Ciss

VDS = -10 V, VGS = 0, f = 1 MHz

240

Reverse transfer capacitance

Crss

VDS = -10 V, VGS = 0, f = 1 MHz

Output capacitance

Coss

VDS = -10 V, VGS = 0, f = 1 MHz

Turn-on time

ton

Switching time

Turn-off time

toff

VDD = -15 V, ID = -0.3 A

VGS = 0~-2.5 V, RG = 4.7 W

Note3: Pulse test

Switching Time Test Circuit

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for

this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower

voltage than Vth.

(relationship can be established as follows: VGS (off) < Vth < VGS (on))

Please take this into consideration for using the device.

VGS recommended voltage of -2.5 V or higher to turn on this product.

ton

toff

0 V

-2.5 V

VDD

VDS (ON)

10%

90%

10%

(b) VIN

VGS

VDS

VDD = -15 V

RG = 4.7 W

D.U. <= 1%

VIN: tr, tf < 5 ns

COMMON SOURCE

= 25°C

-2.5 V

OUT

VDD

(a) Test circuit

SSM3J01T Datasheet(PDF) 2 Page - Toshiba Semiconductor

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