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AFM906N Datasheet(PDF) 7 Page - NXP Semiconductors

Part # AFM906N
Description  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
PDF  16 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFM906N Datasheet(HTML) 7 Page - NXP Semiconductors

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AFM906N
7
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 440–520 MHz UHF BROADBAND
REFERENCE CIRCUIT
420
Gps
f, FREQUENCY (MHz)
Figure 5. Power Gain, Drain Efficiency and Output Power
versus Frequency at a Constant Input Power — 7.5 Vdc
5
90
D
VDD =7.5 Vdc, Pin =0.16 W,IDQ = 150 mA
Pout
21
20
19
18
17
16
15
14
13
12
11
440
460
480
500
520
540
70
60
50
40
6
7
8
9
0
Detail A
Pin =22 dBm
VGS, GATE--SOURCE VOLTAGE (VOLTS)
0.5
1
2
0.2
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Gate--Source Voltage
12
Detail A
12
3
4
5
10
8
6
4
2
0
Pin =19 dBm
Pin =22 dBm
Pin =19 dBm
1.5
2.5
0.4
0.6
0.8
1.0
1.2
Figure 7. Power Gain, Drain Efficiency and Output
Power versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
0.01
D
520 MHz
Gps
22
80
Pout
VDD =7.5 Vdc, IDQ = 150 mA
440 MHz
480 MHz
520 MHz
440 MHz
440 MHz
480 MHz
f = 520 MHz
20
18
16
14
12
10
8
0.1
1
60
40
20
12
8
4
0
80
480 MHz
VDD =7.5 Vdc,f=480 MHz
VDD =7.5 Vdc,f=480 MHz



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