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AFM907N Datasheet(PDF) 10 Page - NXP Semiconductors |
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AFM907N Datasheet(HTML) 10 Page - NXP Semiconductors |
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10 / 16 page ![]() 10 RF Device Data NXP Semiconductors AFM907N TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND RF TEST FIXTURE Gps Pout ηD VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 10. Output Power versus Gate--Source Voltage 2.5 3.0 3.5 4.0 10 8 6 4 2 0 2.0 1.5 1.0 Pin = 18.5 dBm Pin = 15.5 dBm VDD =7.5 Vdc f= 520 MHz 12 0 Pin, INPUT POWER (WATTS) Figure 11. Power Gain, Drain Efficiency and Output Power versus Input Power 0 90 VDD =7.5 Vdc, IDQ1 = 100 mA, f = 520 MHz 25 24 23 22 21 20 19 18 17 16 15 0.05 0.10 0.15 0.20 0.25 50 30 10 2 4 6 8 70 0.30 0.35 0.40 10 14 12 |
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