AFT05MS006N datasheet(3/23 Pages) NXP

Part #	AFT05MS006N

Description	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

PDF	23 Pages

Scroll/Zoom	100%

Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 23 page

AFT05MS006NT1

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS =7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.7

—

Output Capacitance

(VDS =7.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

Input Capacitance

(VDS =7.5 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =7.5 Vdc, IDQ = 100 mA, Pin = 19.5 dBm, f = 520 MHz

Common--Source Amplifier Output Power

Pout

—

6.0

—

Drain Efficiency

D

—

73.0

—

Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA

Frequency

(MHz)

Signal

Type

VSWR

(W)

Test Voltage, VDD

Result

520

> 65:1 at all Phase Angles

0.12

(3 dB Overdrive)

10.8

No Device Degradation

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