AFT09S200W02N datasheet(7/19 Pages) NXP

7 / 19 page

AFT09S200W02NR3 AFT09S200W02GNR3

RF Device Data

Freescale Semiconductor, Inc.

VDD =28 Vdc,IDQ = 1484 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

(MHz)

Zsource

()

Zin

()

Max Output Power

P1dB

Zload (1)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

920

1.94 - j4.69

2.09 + j4.54

0.625 - j0.97

17.7

54.0

253

51.4

-6

940

2.29 - j5.04

2.41 + j4.89

0.611 - j1.00

17.4

53.9

245

49.2

-6

960

2.98 - j5.40

2.82 + j5.25

0.653 - j1.12

17.2

53.8

239

49.0

-6

(MHz)

Zsource

()

Zin

()

Max Output Power

P3dB

Zload (2)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

920

1.94 - j4.69

2.09 + j4.64

0.566 - j1.00

15.3

55.2

333

53.8

-9

940

2.29 - j5.04

2.43 + j4.99

0.564 - j1.06

15.0

55.1

325

52.5

-9

960

2.98 - j5.40

2.83 + j5.37

0.578 - j1.11

14.8

55.0

318

52.0

-8

(1) Load impedance for optimum P1dB power.

(2) Load impedance for optimum P3dB power.

Zsource = Measured impedance presented to the input of the device at the package reference plane.

Zin

= Impedance as measured from gate contact to ground.

Zload = Measured impedance presented to the output of the device at the package reference plane.

Figure 8. Load Pull Performance — Maximum Power Tuning

VDD =28 Vdc,IDQ = 1484 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

(MHz)

Zsource

()

Zin

()

Max Drain Efficiency

P1dB

Zload (1)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

920

1.94 - j4.69

2.10 + j4.65

1.36 - j0.05

21.1

51.6

144

65.6

-12

940

2.29 - j5.04

2.45 + j4.99

1.33 - j0.14

20.8

51.6

145

63.6

-11

960

2.98 - j5.40

2.87 + j5.33

1.30 - j0.35

20.2

51.9

154

62.5

-10

(MHz)

Zsource

()

Zin

()

Max Drain Efficiency

P3dB

Zload (2)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

920

1.94 - j4.69

2.12 + j4.72

1.34 - j0.18

18.9

52.8

191

68.6

-17

940

2.29 - j5.04

2.47 + j5.10

1.30 - j0.13

18.8

52.5

179

67.1

-17

960

2.98 - j5.40

2.89 + j5.44

1.27 - j0.35

18.2

52.8

191

65.6

-15

(1) Load impedance for optimum P1dB efficiency.

(2) Load impedance for optimum P3dB efficiency.

Zsource = Measured impedance presented to the input of the device at the package reference plane.

Zin

= Impedance as measured from gate contact to ground.

Zload = Measured impedance presented to the output of the device at the package reference plane.

Figure 9. Load Pull Performance — Maximum Drain Efficiency Tuning

Input Load Pull

Tuner and Test

Circuit

Device

Under

Test

Zsource Zin

Zload

Output Load Pull

Tuner and Test

Circuit

AFT09S200W02N Datasheet(PDF) 7 Page - NXP Semiconductors

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