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AFT09S282N Datasheet(PDF) 2 Page - NXP Semiconductors |
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AFT09S282N Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 14 page ![]() 2 RF Device Data Freescale Semiconductor, Inc. AFT09S282NR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +70 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature Range TC --40 to +150 °C Operating Junction Temperature Range (1,2) TJ --40 to +225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 80 W CW, 28 Vdc, IDQ = 1500 mA, 960 MHz Case Temperature 91°C, 282 W CW, 28 Vdc, IDQ = 1500 mA, 960 MHz RθJC 0.31 0.27 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 °C Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS =70 Vdc, VGS =0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS =28 Vdc, VGS =0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS =5 Vdc, VDS =0 Vdc) IGSS — — 1 μAdc On Characteristics Gate Threshold Voltage (VDS =10 Vdc, ID = 370 μAdc) VGS(th) 1.0 1.5 2.0 Vdc Gate Quiescent Voltage (VDD =28 Vdc, ID = 1400 mA, Measured in Functional Test) VGS(Q) 1.7 2.2 2.7 Vdc Drain--Source On--Voltage (VGS =10 Vdc, ID =3.6 Adc) VDS(on) 0.1 0.14 0.3 Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) |
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