NXP Semiconductors

BGS8H2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8H2

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© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 3 — 29 June 2018

COMPANY CONFIDENTIAL

7 / 15

12 Characteristics

series. Unless otherwise specified.

Symb

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Parameter

Conditions

Min Typ Max Unit

between gain mode and bypass mode

f = 2350 MHz

[1] -8

-

+8

deg

Δφ

phase variation

f = 2655 MHz

-

-

-

deg

Gain mode

supply current

3.6

5.6

7.6

mA

f = 2350 MHz

[1] [2] 10.0 12.0 14.0 dB

f = 2500 MHz

9.3

11.3 13.3 dB

power gain

f = 2655 MHz

[1] [3] 8.5 10.5 12.5 dB

f = 2350 MHz

[2] -

7.5

-

dB

input return loss

f = 2655 MHz

[3] -

8.0

-

dB

f = 2350 MHz

[2] -

9.0

-

dB

output return loss

f = 2655 MHz

[3] -

7.0

-

dB

f = 2350 MHz

[2] -

22.0 -

dB

ISL

isolation

f = 2655 MHz

[3] -

22.0 -

dB

f = 2350 MHz

[1] [2] [4] -

1.05 1.5

dB

NF

noise figure

f = 2655 MHz

[1] [3] [4] -

1.15 1.6

dB

f = 2350 MHz

[1] [2] -9.5 -5.5 -

dBm

compression

f = 2655 MHz

[1] [2] -8.5 -4.5 -

dBm

f = 2350 MHz

[1] [2] -2

+3.0 -

dBm

input third-order intercept

point

f = 2655 MHz

[1] [3] -2

+3.0 -

dBm

K

Rollett stability factor

1

-

-

-

turn-on time

-

-

1.7

µs

turn-off time

-

-

0.6

µs

Bypass mode

supply current

-

-

1

µA

f = 2350 MHz

[1] [2] -3.9 -2.4 -0.9 dB

f = 2500 MHz

[1] -4.5 -2.6 -1.1 dB

power gain

f = 2655 MHz

[1] [2] -4.2 -2.7 -1.2 dB

f = 2350 MHz

[2] -

12.0 -

dB

input return loss

f = 2655 MHz

[3] -

11.0 -

dB

f = 2350 MHz

[2] -

11.0 -

dB

output return loss

f = 2655 MHz

[3] -

11.0 -

dB