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IXFN72N55Q2 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFN72N55Q2 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 4 page  © 2003 IXYS All rights reserved M d Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque 1.5/13 Nm/lb.in. Weight 30 g Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 1mA 550 V V GS(th) V DS = VGS, ID = 8mA 2.5 5.0 V I GSS V GS = ±30 V, VDS = 0 ±200 nA I DSS V DS = VDSS T J = 25 °C 100 µA V GS = 0 V T J = 125°C5 mA R DS(on) V GS = 10 V, ID = 0.5 • ID25 72 m Ω Note 1 DS99030B(10/03) HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Q g, Low Intrinsic Rg High dV/dt, Low t rr IXFN 72N55Q2 V DSS = 550 V I D25 = 72 A R DS(on)= 72 m Ω Ω Ω Ω Ω t rr ≤≤≤≤≤ 250 ns Symbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C 550 V V DGR T J = 25°C to 150°C; RGS = 1 MΩ 550 V V GS Continuous ±30 V V GSM Transient ±40 V I D25 T C = 25°C72 A I DM T C = 25°C, pulse width limited by TJM 288 A I AR T C = 25°C72 A E AR T C = 25°C60 mJ E AS T C = 25°C 5.0 J dv/dt I S ≤ I DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 20 V/ns T J ≤ 150°C, RG = 2 Ω P D T C = 25°C 890 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C V ISOL 50/60 Hz, RMS, t = 1 minute 2500 V S G S D miniBLOC, SOT-227 B (IXFN) E153432 G = Gate D = Drain S = Source Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • Double metal process for low gate resistance • miniBLOC, with Aluminium nitride isolation • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Switched-mode and resonant-mode power supplies • DC choppers • Pulse generators Advantages • Easy to mount • Space savings • High power density Preliminary Data Sheet |
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