CS22-08io1M

0

25

50

75 100 125 150 175

0

5

10

15

20

25

30

0

25

50

75

0

1

2

3

4

0,001

0,01

0,1

1

80

120

160

200

240

280

0,5

1,0

1,5

2,0

0

10

20

30

40

50

60

0,001

0,01

0,1

1

10

100

0

1

2

3

I

T

[A]

t [s]

V

2

3

4 5 6 7 8 9 0

1

1

100

1000

I

[A

t [ms]

I

TSM

[A]

T

T

T

50 Hz, 80% V

RRM

T

T

V

V

G

[V]

I

I

T(AV)M

[A]

T

Z

thJC

[K/W]

t [s]

Fig. 1 Forward characteristics

Fig. 2 Surge overload current

I

Fig. 3 I

Fig. 4 Gate voltage & gate current

Triggering: A = no; B = possible; C = safe

Fig. 6 Max. forward current at

case temperature

Fig. 8 Transient thermal impedance junction to case

T

125°C

I

I

A

B

B

B

C

t

gd

[µs]

I

lim.

typ.

Fig. 5 Gate controlled delay time t

gd

0

5

10

15

20

0

4

8

12

16

20

24

I

P

(AV)

[W]

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

0

50

100

150

T

T

dc =

1

0.5

0.4

0.33

0.17

0.08

R

thHA

0.6

0.8

1.0

2.0

4.0

8.0

180° sine

i

R

t

1

0.015

0.0011

2

0.124

0.0019

3

0.395

0.07

4

1.606

1.1

5

0.86

4.9

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.

20150827b

Data according to IEC 60747and per semiconductor unless otherwise specified

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