MDF12N50F datasheet(2/8 Pages) MGCHIP

2 / 8 page

Jun 2018. Version 1.1

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDP12N50FTH

-55~150

TO-220

Tube

Halogen Free

MDF12N50FTH

-55~150

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

500

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.5

4.5

Drain Cut-Off Current

IDSS

VDS = 500V, VGS = 0V

μA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

100

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 5.75A

0.59

0.75

Forward Transconductance

gfs

VDS = 30V, ID = 5.75A

Dynamic Characteristics

Total Gate Charge

VDS = 400V, ID = 11.5A, VGS = 10V

(3)

Gate-Source Charge

Qgs

7.0

Gate-Drain Charge

Qgd

7.5

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

1010

1300

Reverse Transfer Capacitance

Crss

2.7

4.0

Output Capacitance

Coss

125

165

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 250V, ID = 11.5A,

RG = 25Ω

(3)

100

Rise Time

Turn-Off Delay Time

td(off)

120

Fall Time

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

11.5

Source-Drain Diode Forward

Voltage

VSD

IS = 11.5A, VGS = 0V

1.4

Body Diode Reverse Recovery

Time

trr

IF = 11.5A, dl/dt = 100A/μs

(3)

100

Body Diode Reverse Recovery

Charge

Qrr

2.61

μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

ISD ≤11.5A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C

4. L=6.3mH,

IAS=11.5A, VDD=50V, Rg =25Ω, Starting TJ=25°C,

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