MDF12N50FTH datasheet(4/8 Pages) MGCHIP

4 / 8 page

Jun 2018. Version 1.1

MagnaChip Semiconductor Ltd.

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

MDP12N50F(TO-220)

Fig.11 Transient Thermal Response Curve

MDP12N50F(TO-220)

-5

-4

-3

-2

-1

-2

-1

※ Notes :

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Z

θ JC* Rθ JC(t) + TC

Θ JC=0.75℃/W

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

1, Rectangular Pulse Duration [sec]

100V

250V

400V

※ Note : I

D = 11.5A

G, Total Gate Charge [nC]

Fig.12 Transient Thermal Response Curve

MDF12N50F(TO-220F)

-1

-2

-1

10 s

100 s

100 ms

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

J=Max rated

C=25

℃

DS, Drain-Source Voltage [V]

-5

-4

-3

-2

-1

-2

-1

※ Notes :

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Z

θ JC* Rθ JC(t) + TC

Θ JC=3.0℃/W

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

1, Rectangular Pulse Duration [sec]

Fig.10 Maximum Safe Operating Area

MDF12N50F(TO-220F)

-1

-2

-1

10s

100 s

100 ms

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

J=Max rated

C=25

℃

DS, Drain-Source Voltage [V]

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Notes ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

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