M385G-25-AE3-R datasheet(4/6 Pages) UTC

4 / 6 page

M385

Preliminary

LINEAR INTEGRATED CIRCUIT

UNISONIC TECHNOLOGIES CO., LTD

4 of 6

www.unisonic.com.tw

QW-R101-028.f



ABSOLU T E M AX I M U M RAT I N GS

PARAMETER

SYMBOL

RATINGS

UNIT

Reverse Current

Forward Current

Junction Temperature

125

°C

Operating Temperature

TOPR

-40 ~ +85

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECT RI CAL CH ARACT ERI ST I CS (TA=25°C, unless otherwise specified.)

M385-1.2V

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Reverse Breakdown Voltage

IR=100

μA

1.222 1.235 1.248

μA<IR<1mA

Reverse Breakdown Voltage

Charge with Current

∆VR

1mA

<IR<20mA

Reverse Dynamic Impedance

IR =100

μA, f=20Hz

Ω

Minimum Operating Current

IR(MIN)

μA

Wideband Noise

IR =100

μA,10Hz≤f≤10KHz

μVrms

Average Temperature Coefficient

αVR

IR =100

μA

100

ppm/°C

Long Term Stability

∆t

∆VR

IR =100

μA, T=1000Hrs, TA=25°C

ppm

M385-2.5V

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Reverse Breakdown Voltage

IR=100

μA

2.475

2.5

2.525

μA<IR<1mA

3.2

Reverse Breakdown Voltage

Charge with Current

∆VR

1mA

<IR<20mA

Reverse Dynamic Impedance

IR =100

μA, f=20Hz

Ω

Minimum Operating Current

IR(MIN)

μA

Wideband Noise

IR =100

μA,10Hz≤f≤10KHz

μVrms

Average Temperature Coefficient

αVR

IR =100

μA

100

ppm/°C

Long Term Stability

∆t

∆VR

IR =100

μA, T=1000Hrs, TA=25°C

ppm

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