D3V3F4U10LP

Document number: DS38563 Rev. 1 - 2

2 of 5

www.diodes.com

March 2017

© Diodes Incorporated

D3V3F4U10LP

Characteristic

Symbol

Value

Unit

Condition

Peak Pulse Current, per IEC61000-4-5

5

A

Peak Pulse Power, per IEC61000-4-5

30

W

ESD Protection

– Contact Discharge, per IEC61000-4-2

±12

kV

ESD Protection

– Air Discharge, per IEC61000-4-2

±12

kV

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation Typical (Note 5)

350

mW

Thermal Resistance, Junction to Ambient Typical (Note 5)

360

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Working Voltage

—

—

3.3

V

—

Reverse Current

—

—

1.0

μA



Reverse Breakdown Voltage

5.5

6.2

—

V

Forward Clamping Voltage

-1.0

-0.85

—

V

Holding Reverse Voltage

—

1.3

—

V

Reverse Clamping Voltage (Note 6)

—

3.5

—

V

Clamping Voltage (Note 7)

—

5

—

V

Clamping Voltage (Note 7)

—

5

—

V

Dynamic Reverse Resistance

—

0.25

—

Ω

Dynamic Forward Resistance

—

0.2

—

Ω

Channel Input Capacitance

—

0.5

55

—

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated

’s suggested pad layout, which can be found on our website at

http://www.diodes.com/package-outlines.html.