D3V3H1U2LP

Document number: DS37522 Rev. 1 - 2

2 of 4

www.diodes.com

February 2017

© Diodes Incorporated

D3V3H1U2LP

Characteristic

Symbol

Value

Unit

Condition

Peak Pulse Power Dissipation

350

W

8/20µs, per Figure 3

Peak Pulse Current

35

A

8/20µs, per Figure 3

ESD Protection

– Contact Discharge

±30

kV

IEC61000-4-2 Standard

ESD Protection

– Air Discharge

±30

kV

IEC61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

C/W

Operating and Storage Temperature Range

-65 to +150

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Working Voltage

—

—

3.3

V

—

Reverse Current (Note 6)

—

—

5

A

Reverse Breakdown Voltage

4.0

—

—

V

Reverse Clamping Voltage

—

—

7.5

V

—

—

10

Capacitance

—

280

—

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporated suggested pad layout, which can be found on our website

at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

0

125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

25

75

125

250

175

Note 5

200

225

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (癈 )

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200

(°C)