D15V0H1U2LP16

Document number: DS38760 Rev. 1 - 2

2 of 4

www.diodes.com

July 2017

© Diodes Incorporated

D15V0H1U2LP16

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

2,250

W

8/20µs (Note 7)

Peak Pulse Current

90

A

8/20µs (Note 7)

ESD Protection

– Contact Discharge

±30

kV

Standard IEC 61000-4-2

ESD Protection

– Air Discharge

±30

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

300

mW

417

C/W

Operating and Storage Temperature Range

-55 to +150

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

15

V

—

Channel Leakage Current (Note 6)

—

—

200

nA



Forward Voltage

0.6

0.8

1.2

V

Reverse Breakdown Voltage

15.5

—

—

V



Clamping Voltage, Positive Transients (Note 7)

—

—

18

V

—

—

20

V

—

—

25

V

Channel Input Capacitance (Note 8)

—

700

—

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown in Diodes Incorporated

’s package outline PDFs, which can be found on our website at

http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

8. Measured from any I/O to GND.

0

125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

200

Note 5

250

300

350

400

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (癈 )

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200

C)