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ISCF18110 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # ISCF18110
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF18110 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
ISCF18110
DESCRIPTION
·
Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 450V(Min.)
·
Collector Saturation Voltage
: VCE(sat) = 0.6(Max) @ IC= 2.0A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation.
APPLICATIONS
·
Designed for use in high-voltage, high-speed, power
switching in inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-peak
8
A
IB
Base Current
2
A
PC
Collector Power Dissipation
TC=25℃
75
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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