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2P4M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2P4M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 1 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark isc Thyristors 2P4M APPLICATIONS · Highly sensitive triggering levels · For capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage 400 V IT(AV) On-state current 180°conduction angle 4 A ITSM Non-repetitive surge peak on-state current t= 20ms 20 A PG(AV) Average gate power dissipation Tj = 125℃ 0.2 W Tj Junction temperature 125 Tstg Storage temperature -40 to + 150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM, RGK=1kΩ VRM=VRRM, RGK=1kΩ,Tj=125℃ 10 500 μ A IDRM Repetitive peak off-state current VDM=VDRM, RGK=1kΩ VDM=VDRM ,RGK=1kΩ,Tj=125℃ 10 500 μ A VTM On-state voltage ITM= 4A 1.8 V IGT Gate-trigger current VDM=12V;RL=140Ω 200 μ A VGT Gate-trigger voltage VDM=12V;RL=140Ω 0.8 V |
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Similar Description - 2P4M_18 |
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