MHT1002N datasheet(2/20 Pages) NXP

2 / 20 page

RF Device Data

Freescale Semiconductor, Inc.

MHT1002NR3 MHT1002GNR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +105

Vdc

Gate--Source Voltage

VGS

–6.0, +10

Vdc

Operating Voltage

VDD

55, +0

Vdc

Storage Temperature Range

Tstg

–65 to +150

C

Case Operating Temperature Range

–40 to +150

C

Operating Junction Temperature Range (1,2)

–40 to +225

C

Total Device Dissipation @ TC =25C

Derate above 25

C

833

4.17

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 93

C, 350 W CW, 50 Vdc, IDQ = 100 mA, 915 MHz

RJC

0.24

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1C, passes 1500 V

Machine Model (per EIA/JESD22--A115)

A, passes 100 V

Charge Device Model (per JESD22--C101)

IV, passes 2000 V

Table 4. Moisture Sensitivity Level (MSL)

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

C

Table 5. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (4)

Zero Gate Voltage Drain Leakage Current

(VDS = 105 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =48 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

On Characteristics (4)

Gate Threshold Voltage

(VDS =10 Vdc, ID = 460 Adc)

VGS(th)

1.3

1.9

2.3

Vdc

Gate Quiescent Voltage

(VDS =48 Vdc, IDA = 860 mAdc)

VGS(Q)

—

2.0

—

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =1.3 Adc)

VDS(on)

0.1

0.21

0.3

Vdc

Dynamic Characteristics (5)

Output Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

36.0

—

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf/calculators.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.

4. Each side of device measured separately.

5. Part is input pre--matched. Only output capacitance is measurable.

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