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CAT93C46BLE-G Datasheet(PDF) 2 Page - ON Semiconductor

Part # CAT93C46BLE-G
Description  EEPROM Serial 1-Kb Microwire
PDF  15 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT93C46BLE-G Datasheet(HTML) 2 Page - ON Semiconductor

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Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Units
Storage Temperature
−65 to +150
°C
Voltage on Any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
NEND (Note 3)
Endurance
1,000,000
Program / Erase Cycles
TDR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Block Mode, VCC = 5 V, 25°C
Table 3. D.C. OPERATING CHARACTERISTICS
(VCC = +1.8 V to +5.5 V, TA = −40°C to +125°C, VCC = +1.65 V to +5.5 V, TA = −20°C to +85°C unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC1
Supply Current (Write)
Write, VCC = 5.0 V
1
mA
ICC2
Supply Current (Read)
Read, DO open, fSK = 2 MHz, VCC = 5.0 V
500
mA
ISB1
Standby Current
(x8 Mode)
VIN = GND or VCC
CS = GND, ORG = GND
TA = −40°C to +85°C
2
mA
TA = −40°C to +125°C
5
ISB2
Standby Current
(x16 Mode)
VIN = GND or VCC
CS = GND,
ORG = Float or VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
3
ILI
Input Leakage Current
VIN = GND to VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
ILO
Output Leakage
Current
VOUT = GND to VCC
CS = GND
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
VIL1
Input Low Voltage
4.5 V ≤ VCC < 5.5 V
−0.1
0.8
V
VIH1
Input High Voltage
4.5 V ≤ VCC < 5.5 V
2
VCC + 1
V
VIL2
Input Low Voltage
1.65 V ≤ VCC < 4.5 V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.65 V ≤ VCC < 4.5 V
VCC x 0.7
VCC + 1
V
VOL1
Output Low Voltage
4.5 V ≤ VCC < 5.5 V, IOL = 3 mA
0.4
V
VOH1
Output High Voltage
4.5 V ≤ VCC < 5.5 V, IOH = −400 mA
2.4
V
VOL2
Output Low Voltage
1.65 V ≤ VCC < 4.5 V, IOL = 1 mA
0.2
V
VOH2
Output High Voltage
1.65 V ≤ VCC < 4.5 V, IOH = −100 mA
VCC − 0.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. PIN CAPACITANCE (TA = 25°C, f = 1 MHz, VCC = 5 V)
Symbol
Test
Conditions
Min
Typ
Max
Units
COUT (Note 4)
Output Capacitance (DO)
VOUT = 0 V
5
pF
CIN (Note 4)
Input Capacitance (CS, SK, DI, ORG)
VIN = 0 V
5
pF
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.



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