N24RF64DTPT3G datasheet(2/21 Pages) ONSEMI

2 / 21 page

N24RF64

www.onsemi.com

Figure 1. Functional Symbol

VCC

AN1

AN2

A0, A1

SCL

SDA

VSS

N24RF64

Table 1. ABSOLUTE MAXIMUM RATINGS

Parameter

Rating

Unit

Storage Temperature

−65 to +150

Ambient Operating Temperature

-4

0 to +105

Voltage on SCL, SDA, A0, A1 and VCC pins with respect to Ground (Note 1)

−0.5 to 6.5

RF Input Voltage Peak to Peak Amplitude between AN1 and AN2, VSS pad floating

AC Voltage on AN1 or AN2 with respect to GND

-1 to 15

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. During transitions, the voltage undershoot on any pin should not exceed −1 V for more than 20 ns. Voltage overshoot on the SCL and SDA

I2C pins should not exceed the absolute maximum ratings, irrespective of VCC.

Table 2. RELIABILITY CHARACTERISTICS − EEPROM (Note 2)

Symbol

Parameter

Test Conditions

Max

Unit

NEND

Endurance

TA ≤ 25_C, 1.8 V < VCC < 5.5 V

2,000,000

Write Cycles (Note 3)

TA = 85_C, 1.8 V < VCC < 5.5 V

800,000

TA = 105_C, 1.8 V < VCC < 5.5 V

300,000

TDR

Data Retention

TA = 25_C

200

Year

2. Determined through qualification/characterization.

3. A Write Cycle refers to writing a Byte or a Page.

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