D3V3Q1B2LP3

Document number: DS38726 Rev. 2 - 2

2 of 5

www.diodes.com

May 2017

© Diodes Incorporated

D3V3Q1B2LP3

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

30

W

8/20

μs, per Figure 1

Peak Pulse Current

4

A

8/20

μs, per Figure 1

ESD Protection

– Contact Discharge

±14

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

±16

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

3.3

V

—

Channel Leakage Current (Note 6)

—

—

100

nA

Breakdown Voltage

3.8

—

6.5

V

Clamping Voltage, Positive Transients

—

—

5.8

V

—

—

6.7

—

—

7.5

Differential Resistance

—

0.4

—

Ω

I/O to GND

Channel Input Capacitance

—

6

9

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website

at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.