D8V0L1B2LP3

Document number: DS38763 Rev. 1 - 2

2 of 4

www.diodes.com

January 2017

© Diodes Incorporated

D8V0L1B2LP3

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

66

W

8/20

μs, per Figure 3

Peak Pulse Current

4

A

8/20

μs, per Figure 3

ESD Protection

– Contact Discharge

±25

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

8

V

—

Channel Leakage Current (Note 6)

—

—

50

nA

Breakdown Voltage

8.5

—

12

V

Clamping Voltage, Positive Transients

—

—

12.5

V

—

—

16.5

Differential Resistance

—

0.4

—

Ω

I/O to GND

Channel Input Capacitance

—

8.5

—

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on

Diodes Incorporated’s suggested pad layout, which can be found on our website at

http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.

0

125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

25

75

125

250

175

Note 5

200

225

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (癈 )

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200

(