D8V0X1B2LP

Document number: DS39483 Rev. 1 - 2

2 of 5

www.diodes.com

January 2018

© Diodes Incorporated

D8V0X1B2LP

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Current

4

A

8/20µs, See Figure 3

ESD Protection

– Contact Discharge

±20

kV

IEC 61000-4-2 Standard

ESD Protection

– Air Discharge

±24

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

250

mW

Thermal Resistance, Junction to Ambient (Note 5)

500

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Working Voltage

—

—

8.0

V

—

Reverse Current (Note 6)

—

—

1

uA

Reverse Breakdown Voltage

10.0

—

—

V

Reverse Clamping Voltage, Positive Transients

—

—

15

V

—

—

18.5

V

Dynamic Resistance

—

0.6

—

Ω

Capacitance

—

0.35

0.5

pF

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes

’ suggested pad layout per http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.