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2SC5681 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SC5681 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SC5681 No.6607-2/4 0 0 2 IC -- VCE IT02391 IT02393 IT02392 IT02394 4 6 10 8 14 12 12 56 34 789 10 0 0 IC -- VBE 0.2 0.4 0.6 0.8 1.0 1.4 1.2 8 6 12 10 4 2 1.0 hFE -- IC 23 5 7 2 2 35 7 0.1 1.0 10 10 2 3 5 100 7 2 3 5 7 0.1 VCE(sat) -- IC 23 5 7 1.0 23 5 7 10 2 0.01 2 3 10 2 3 5 7 2 3 5 7 2 3 5 7 1.0 0.1 IB=0 0.2A 0.4A 0.6A 0.8A 1.0A 1.2A 1.4A 1.6A 2.0A Ta=120 °C 25 °C --40°C Ta= --40 °C 120 °C 25°C 1.8A VCE=5V VCE=5V IC / IB=5 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit DC Current Gain hFE1VCE=5V, IC=1A 15 hFE2VCE=5V, IC=12A 4 7 Collectoe-to-Emitter Saturation Voltage VCE(sat) IC=10.8A, IB=2.7A 3 V Base-to-Emitter Saturation Voltage VBE(sat) IC=10.8A, IB=2.7A 1.5 V Storage Time tstg IC=7A, IB1=1.4A, IB2=--2.8A 3.0 µs Fall Time tf IC=7A, IB1=1.4A, IB2=--2.8A 0.2 µs Switching Time Test Circuit VR RB VCC=200V VBE= --2V + + 50 Ω INPUT OUTPUT RL=28.6Ω 100 µF 470 µF PW=20 µs IB1 D.C. ≤1% IB2 |
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