DPG60C200HB

ns

3

A

T

reverse recovery time

A

7

35

55

ns

I

RM

max. reverse recovery current

30

25

T= 125°C

VJ

=A/µs

200

/dt

t

rr

130

25

T= 125°C

VJ

V

=

V

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

1.34

R

0.95 K/W

R

min.

30

V

1

T

= 25°C

VJ

T

=

°C

VJ

mA

0.1

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

140

P

tot

160

W

T

= 25°C

C

R

K/W

30

200

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Unit

1.63

T

= 25°C

VJ

150

V

F0

V

0.70

T

=

°C

VJ

175

10.5

mΩ

V

1.06

T

=

°C

VJ

I =

A

F

V

30

1.39

I =

A

F

60

I =

A

F

60

threshold voltage

slope resistance

for power loss calculation only

µA

150

V

200

max. repetitive reverse blocking voltage

T

= 25°C

VJ

C

J

42

junction capacitance

V =

V

150

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine;

T

= 45°C

VJ

max. forward surge current

V = 0 V

R

T

=

°C

VJ

175

360

A

200

FAV

d =

rectangular

0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Fast Diode

200

0.25

IXYS reserves the right to change limits, conditions and dimensions.

20131126b

Data according to IEC 60747and per semiconductor unless otherwise specified

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