2002 Apr 09

2

Philips Semiconductors

Product specification

NPN resistor-equipped transistor;

PNP general purpose transistor

PUMF11

FEATURES

• Resistor-equipped transistor and general purpose

transistor in one package

• 100 mA collector current

• 50 V collector-emitter voltage

• 300 mW total power dissipation

• SOT363 package; replaces two SOT323 (SC-70)

packaged devices on same PCB area

• Reduced pick and place costs.

APPLICATIONS

• Power management switch for portable equipment,

e.g. cellular phone and CD player

• Switch for regulator.

DESCRIPTION

NPN resistor-equipped transistor and a PNP general

purpose transistor in a SOT363 (SC-88) plastic package.

MARKING

Note

1.

∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.

TYPE NUMBER

PUMF11

R1

∗

PINNING

PIN

DESCRIPTION

1, 4

emitter

TR1; TR2

2, 5

base

TR1; TR2

6, 3

collector

TR1; TR2

65

4

12

3

R2

TR1

TR2

R1

MAM465

13

2

4

5

6

Top view

Fig.1 Simplified outline (SOT363) and symbol.

MBK120

2, 5

6, 3

1, 4

Fig.2 Equivalent inverter symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

TR1 (NPN)

collector-emitter voltage

50

V

output current (DC)

100

mA

R1

bias resistor

22

k

Ω

R2

bias resistor

47

k

Ω

TR2 (PNP)

collector-emitter voltage

50

V

collector current (DC)

100

mA

peak collector current

200

mA